IXTA06N120P-TRL
IXYS
IXYS
MOSFET N-CH 1200V 600MA TO263
$4.54
Available to order
Reference Price (USD)
1+
$4.54000
500+
$4.4946
1000+
$4.4492
1500+
$4.4038
2000+
$4.3584
2500+
$4.313
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IXTA06N120P-TRL by IXYS, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IXTA06N120P-TRL stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose IXYS.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Panjit International Inc.
PJA3449-AU_R1_000A1
Nexperia USA Inc.
PMPB27EP,115
Vishay Siliconix
SUD20N10-66L-GE3
Infineon Technologies
BSZ028N04LSATMA1
Infineon Technologies
IPB180P04P403ATMA1
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJL3401A-F2-0000HF
onsemi
HUF76429S3ST
onsemi
NVTFS6H850NTAG
onsemi
NVMFS5C423NLAFT3G
Alpha & Omega Semiconductor Inc.