IXTA180N10T
IXYS
IXYS
MOSFET N-CH 100V 180A TO263
$6.00
Available to order
Reference Price (USD)
1+
$4.14000
50+
$3.33000
100+
$3.03400
500+
$2.45680
1,000+
$2.07200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTA180N10T by IXYS is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IXTA180N10T is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AA
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Alpha & Omega Semiconductor Inc.
AOL1240
Fairchild Semiconductor
FQD2N50TF
Renesas Electronics America Inc
2SK1403A-E
Vishay Siliconix
SQ2389ES-T1_BE3
Diodes Incorporated
DMPH4015SSSQ-13
Alpha & Omega Semiconductor Inc.
AOT11S60L
onsemi
MMBF2201NT1G
STMicroelectronics
STP4N150
STMicroelectronics
STFI9N80K5
Microchip Technology