IXTA2R4N120P-TRL
IXYS
IXYS
MOSFET N-CH 1200V 2.4A TO263
$4.46
Available to order
Reference Price (USD)
1+
$4.46028
500+
$4.4156772
1000+
$4.3710744
1500+
$4.3264716
2000+
$4.2818688
2500+
$4.237266
Exquisite packaging
Discount
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Meet the IXTA2R4N120P-TRL by IXYS, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IXTA2R4N120P-TRL stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose IXYS.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7.5Ohm @ 1.2A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1207 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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