Shopping cart

Subtotal: $0.00

IXTA34N65X2

IXYS
IXTA34N65X2 Preview
IXYS
MOSFET N-CH 650V 34A TO263AA
$5.96
Available to order
Reference Price (USD)
50+
$4.27500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AA
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Products

Fairchild Semiconductor

SFS9Z34

Rohm Semiconductor

RD3L220SNTL1

Vishay Siliconix

IRF840APBF

Infineon Technologies

IPP111N15N3GXKSA1

STMicroelectronics

STW9NK95Z

Infineon Technologies

IRF2204PBF

Vishay Siliconix

SI4840BDY-T1-GE3

Fairchild Semiconductor

FQPF9N30

STMicroelectronics

STD18NF25

Top