IXTA76P10T
IXYS
IXYS
MOSFET P-CH 100V 76A TO263
$7.10
Available to order
Reference Price (USD)
1+
$4.90000
50+
$3.93760
100+
$3.58750
500+
$2.90500
1,000+
$2.45000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IXTA76P10T by IXYS, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IXTA76P10T is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 298W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AA
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Panasonic Electronic Components
MTM761100LBF
onsemi
FCP190N65S3R0
Vishay Siliconix
2N7002K-T1-E3
Fairchild Semiconductor
SFR2955TF
Vishay Siliconix
SIR670DP-T1-GE3
Infineon Technologies
BSZ058N03MSGATMA1
Toshiba Semiconductor and Storage
TK20N60W,S1VF
Taiwan Semiconductor Corporation
TSM055N03EPQ56 RLG
Renesas Electronics America Inc
RJK2076DPA-00#J5A
Infineon Technologies