IXTA80N10T
IXYS
IXYS
MOSFET N-CH 100V 80A TO263
$3.77
Available to order
Reference Price (USD)
1+
$2.88000
50+
$2.32500
100+
$2.09250
500+
$1.62750
1,000+
$1.34850
2,500+
$1.30200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the IXTA80N10T single MOSFET from IXYS. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IXTA80N10T combines cutting-edge technology with IXYS's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AA
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Diodes Incorporated
DMP31D7L-13
Nexperia USA Inc.
PMPB12UNEAX
onsemi
FDT86244
onsemi
NTR1P02LT1G
Toshiba Semiconductor and Storage
TK34E10N1,S1X
Rohm Semiconductor
SCT4045DEHRC11
Renesas Electronics America Inc
HAT2033RJ01-EL
Vishay Siliconix
SIR418DP-T1-GE3
Infineon Technologies
IPW65R145CFD7AXKSA1
onsemi