IXTH12N70X2
IXYS
IXYS
MOSFET N-CH 700V 12A TO247
$6.85
Available to order
Reference Price (USD)
30+
$4.23000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IXTH12N70X2 by IXYS, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IXTH12N70X2 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
Related Products
Diodes Incorporated
BSS84W-7-F
Rohm Semiconductor
RJP020N06T100
Infineon Technologies
AUIRFB8409
UnitedSiC
UJ3C065030T3S
Infineon Technologies
AUIRF2804S-7P
Fairchild Semiconductor
FDG311N
Microchip Technology
VP3203N3-G
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJG50N03A-F1-0100HF
Infineon Technologies
IPDH6N03LAG
Renesas Electronics America Inc