IXTH220N20X4
IXYS
IXYS
MOSFET N-CH 200V 220A X4 TO-247
$18.68
Available to order
Reference Price (USD)
1+
$18.68000
500+
$18.4932
1000+
$18.3064
1500+
$18.1196
2000+
$17.9328
2500+
$17.746
Exquisite packaging
Discount
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The IXTH220N20X4 from IXYS redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IXTH220N20X4 offers the precision and reliability you need. Trust IXYS to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 110A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 800W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISO TO-247-3
- Package / Case: TO-247-3
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