IXTH24P20
IXYS
IXYS
MOSFET P-CH 200V 24A TO247
$11.95
Available to order
Reference Price (USD)
1+
$8.20000
30+
$6.72400
120+
$6.06800
510+
$5.08400
1,020+
$4.59200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IXTH24P20 by IXYS, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IXTH24P20 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
Related Products
Texas Instruments
CSD19534KCS
onsemi
NTMYS014N06CLTWG
Microchip Technology
APT1201R2BFLLG
Goford Semiconductor
GT105N10T
IXYS
IXFK120N65X2
Infineon Technologies
IRF6785MTRPBF
Infineon Technologies
BSZ009NE2LS5ATMA1
onsemi
NTLUS3C18PZTBG
Vishay Siliconix
SI3457CDV-T1-E3
IXYS