IXTH26N60P
IXYS
IXYS
MOSFET N-CH 600V 26A TO247
$6.51
Available to order
Reference Price (USD)
30+
$5.12500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTH26N60P single MOSFET from IXYS is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IXTH26N60P is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 460W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
Related Products
onsemi
FDMS86252
onsemi
NTLJS3113PTAG
STMicroelectronics
STD4NK100Z
STMicroelectronics
STB75NF20
Infineon Technologies
IRFB4410PBF
Infineon Technologies
IPP60R070CFD7XKSA1
Rohm Semiconductor
R6504KND3TL1
STMicroelectronics
STP100N8F6
Vishay Siliconix
SIHFR430ATRL-GE3
Toshiba Semiconductor and Storage