IXTP12N70X2
IXYS
IXYS
MOSFET N-CH 700V 12A TO220AB
$4.30
Available to order
Reference Price (USD)
1+
$4.30500
500+
$4.26195
1000+
$4.2189
1500+
$4.17585
2000+
$4.1328
2500+
$4.08975
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTP12N70X2 from IXYS sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to IXYS's IXTP12N70X2 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
Diodes Incorporated
DMTH4007LK3Q-13
IXYS
IXFH70N20Q3
Rectron USA
RMA7P20ED1
Diodes Incorporated
DMN6017SFV-7
IXYS
IXTA160N10T7
STMicroelectronics
STD150N3LLH6
Infineon Technologies
IRLR120NTRLPBF
Diodes Incorporated
DMP3045LVT-13
Infineon Technologies
IPB80P04P4L08ATMA1
STMicroelectronics