IXTQ36N50P
IXYS
IXYS
MOSFET N-CH 500V 36A TO3P
$12.41
Available to order
Reference Price (USD)
1+
$6.90000
30+
$5.65800
120+
$5.10600
510+
$4.27800
1,020+
$3.86400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTQ36N50P from IXYS redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IXTQ36N50P offers the precision and reliability you need. Trust IXYS to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 540W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
Related Products
onsemi
SFT1431-TL-W
Toshiba Semiconductor and Storage
TK35E08N1,S1X
onsemi
FDMC8588
STMicroelectronics
STP90N6F6
Vishay Siliconix
SI4862DY-T1-E3
Infineon Technologies
IPP041N12N3GXKSA1
Alpha & Omega Semiconductor Inc.
AOD7S60
Vishay Siliconix
SIHB8N50D-GE3
Rectron USA
RMA4N60092
Fairchild Semiconductor