IXTQ48N20T
IXYS
IXYS
MOSFET N-CH 200V 48A TO3P
$4.06
Available to order
Reference Price (USD)
30+
$2.65500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTQ48N20T from IXYS sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to IXYS's IXTQ48N20T for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
Related Products
Rohm Semiconductor
RSS095N05FRATB
IXYS
IXFP26N30X3
Infineon Technologies
IPD65R400CEAUMA1
Microchip Technology
APT17F80B
onsemi
FCPF380N65FL1-F154
Infineon Technologies
IMW65R107M1HXKSA1
onsemi
NDB5060L
Vishay Siliconix
SIHA15N60E-GE3
Microchip Technology
TN0610N3-G
Infineon Technologies