IXTT26N50P
IXYS
IXYS
MOSFET N-CH 500V 26A TO268
$9.36
Available to order
Reference Price (USD)
30+
$5.26867
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IXTT26N50P from IXYS, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IXTT26N50P ensures reliable performance in demanding environments. Upgrade your circuit designs with IXYS's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268AA
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Related Products
Vishay Siliconix
SIR140DP-T1-RE3
Microchip Technology
APT20M18B2VFRG
STMicroelectronics
STW28N65M2
onsemi
CPH6434-TL-E
Diodes Incorporated
DMG3402LQ-7
IXYS
IXTA10N60P
Alpha & Omega Semiconductor Inc.
AON6278
Nexperia USA Inc.
PSMN1R5-40PS,127
onsemi
MTP23P06VG
onsemi