IXTT80N20L
IXYS
IXYS
MOSFET N-CH 200V 80A TO268
$21.76
Available to order
Reference Price (USD)
30+
$12.52467
Exquisite packaging
Discount
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Upgrade your designs with the IXTT80N20L by IXYS, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IXTT80N20L is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 32mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6160 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268AA
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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