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IXTX200N10L2

IXYS
IXTX200N10L2 Preview
IXYS
MOSFET N-CH 100V 200A PLUS247-3
$35.39
Available to order
Reference Price (USD)
30+
$20.36600
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 1040W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3 Variant

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