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IXTY1R6N50D2

IXYS
IXTY1R6N50D2 Preview
IXYS
MOSFET N-CH 500V 1.6A TO252
$3.00
Available to order
Reference Price (USD)
1+
$2.29000
70+
$1.85000
140+
$1.66500
560+
$1.29500
1,050+
$1.07300
2,520+
$1.03600
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 100W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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