IXXR110N65B4H1
IXYS
IXYS
IGBT 650V 150A 455W ISOPLUS247
$16.83
Available to order
Reference Price (USD)
30+
$11.03333
Exquisite packaging
Discount
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The IXXR110N65B4H1 Single IGBT transistor by IXYS is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IXXR110N65B4H1 ensures precise power control and long-term stability. With IXYS's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IXXR110N65B4H1 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 150 A
- Current - Collector Pulsed (Icm): 460 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 110A
- Power - Max: 455 W
- Switching Energy: 2.2mJ (on), 1.05mJ (off)
- Input Type: Standard
- Gate Charge: 183 nC
- Td (on/off) @ 25°C: 38ns/156ns
- Test Condition: 400V, 55A, 2Ohm, 15V
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: ISOPLUS247™
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