IXYH20N120C3D1
IXYS
IXYS
IGBT 1200V 36A 230W TO-247AD
$12.24
Available to order
Reference Price (USD)
1+
$10.84000
10+
$9.75700
30+
$8.88967
120+
$8.02250
270+
$7.37204
510+
$6.72157
1,020+
$5.85427
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with the IXYH20N120C3D1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXYH20N120C3D1 delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 36 A
- Current - Collector Pulsed (Icm): 88 A
- Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
- Power - Max: 230 W
- Switching Energy: 1.3mJ (on), 500µJ (off)
- Input Type: Standard
- Gate Charge: 53 nC
- Td (on/off) @ 25°C: 20ns/90ns
- Test Condition: 600V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 195 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXTH)
Related Products
Infineon Technologies
IRG4PC30FPBF
Alpha & Omega Semiconductor Inc.
AOK40B65M3
STMicroelectronics
STGP100N30
STMicroelectronics
STGW15H120DF2
IXYS
IXXX160N65B4
Rohm Semiconductor
RGT16NL65DGTL
Alpha & Omega Semiconductor Inc.
AOD5B65M1
IXYS
IXBH2N250
onsemi
FGD2736G3-F085V
Infineon Technologies