J3E082EUA/S0BE503V
NXP USA Inc.
NXP USA Inc.
TRANSISTOR JFET
$0.00
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NXP USA Inc.'s J3E082EUA/S0BE503V redefines expectations for JFETs in the Discrete Semiconductor Products category. This dual-gate version offers unique flexibility for multiplier and mixer applications with exceptional isolation between gates. Key technical highlights include precisely matched channels, low feedback capacitance, and symmetrical transfer characteristics. The J3E082EUA/S0BE503V dominates in spectrum analyzers, vector network analyzers, and advanced communication test equipment. Its superior performance in phase-sensitive detection circuits makes it invaluable in lock-in amplifiers and synchronous demodulators. The radiation-tolerant variant has been successfully deployed in space telescopes and particle physics experiments, demonstrating its exceptional reliability.
Specifications
- Product Status: Obsolete
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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