JAN1N5811US
Microchip Technology
Microchip Technology
DIODE GEN PURP 150V 6A B-MELF
$7.98
Available to order
Reference Price (USD)
100+
$9.04400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize your device's efficiency with the JAN1N5811US single rectifier diode from Microchip Technology. This Discrete Semiconductor Product is crafted for precision, offering fast recovery times and high current handling. It is ideal for use in power supplies, motor controls, and lighting systems, where energy efficiency is crucial. The JAN1N5811US is also employed in agricultural machinery and marine electronics, proving its versatility across industries. Microchip Technology's JAN1N5811US is synonymous with reliability, making it a trusted choice for engineers worldwide.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 150 V
- Capacitance @ Vr, F: 60pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Operating Temperature - Junction: -65°C ~ 175°C
Related Products
Diotec Semiconductor
AL1A-CT
Microchip Technology
SBR6030L
Vishay General Semiconductor - Diodes Division
BYV98-100-TR
Vishay General Semiconductor - Diodes Division
MPG06M-E3/53
Taiwan Semiconductor Corporation
RS1KLSHRVG
EIC SEMICONDUCTOR INC.
HER302BULK
Diotec Semiconductor
BYW27-1000
Panjit International Inc.
PCDD05120G1_L2_00001
Infineon Technologies
IDW12G65C5XKSA1
Vishay General Semiconductor - Diodes Division