Shopping cart

Subtotal: $0.00

JAN1N6629US

Microsemi Corporation
JAN1N6629US Preview
Microsemi Corporation
DIODE GEN PURP 880V 1.4A D5B
$0.00
Available to order
Reference Price (USD)
100+
$19.43400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 880 V
  • Current - Average Rectified (Io): 1.4A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 880 V
  • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: E-MELF
  • Supplier Device Package: D-5B
  • Operating Temperature - Junction: -65°C ~ 150°C

Related Products

Taiwan Semiconductor Corporation

ES1JLHRFG

Micro Commercial Co

HER604-TP

Vishay General Semiconductor - Diodes Division

SS2PH9HM3/84A

Diodes Incorporated

SBL1030

Taiwan Semiconductor Corporation

SFAF1005G C0G

Taiwan Semiconductor Corporation

HS3B M6G

Vishay General Semiconductor - Diodes Division

S1G/1

Taiwan Semiconductor Corporation

SFAF1606G C0G

Infineon Technologies

IDV03S60CXKSA1

Taiwan Semiconductor Corporation

SRAF840HC0G

Top