JAN2N3810U
Microchip Technology
Microchip Technology
TRANS 2PNP 60V 0.05A
$35.10
Available to order
Reference Price (USD)
100+
$36.85500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The JAN2N3810U BJT Array from Microchip Technology brings military-grade robustness to commercial applications. With a wide operating temperature range (-55 C to +150 C), this Discrete Semiconductor Product performs flawlessly in downhole drilling equipment and satellite subsystems. Its symmetrical layout simplifies heat sink integration for high-power RF amplifiers. The JAN2N3810U undergoes rigorous Q-Class testing to guarantee radiation hardness for aerospace deployments.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
Related Products
Diodes Incorporated
ZXTC6717MCQTA
Micro Commercial Co
BC847BSHE3-TP
Microchip Technology
JANTX2N5794
Nexperia USA Inc.
BC847BPNH-QX
Nexperia USA Inc.
BC856SH-QX
Analog Devices Inc.
MAT02BH/883C
Microchip Technology
2N2977
Microchip Technology
BCY89
Nexperia USA Inc.
BCM847BSH-QF
Microchip Technology