JANS1N5822/TR
Microchip Technology
Microchip Technology
DIODE SMALL-SIGNAL SCHOTTKY
$179.85
Available to order
Reference Price (USD)
1+
$179.85000
500+
$178.0515
1000+
$176.253
1500+
$174.4545
2000+
$172.656
2500+
$170.8575
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The JANS1N5822/TR by Microchip Technology is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The JANS1N5822/TR is also used in smart home devices and wearable technology, ensuring seamless operation. Microchip Technology's expertise in semiconductor technology guarantees that the JANS1N5822/TR delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: B, Axial
- Supplier Device Package: B, Axial
- Operating Temperature - Junction: -65°C ~ 125°C
Related Products
Yangzhou Yangjie Electronic Technology Co.,Ltd
SL16-F1-3000HF
Vishay General Semiconductor - Diodes Division
MBRF1060-E3/45
Nexperia USA Inc.
BAT54J,115
Comchip Technology
CDBA1200LR-HF
Vishay General Semiconductor - Diodes Division
VS-1ENH01-M3/84A
Panjit International Inc.
SB12AFC_R1_00001
Vishay General Semiconductor - Diodes Division
VS-ETH3006FP-M3
Microchip Technology
1N6077
Nexperia USA Inc.
PMBD6050,215
Vishay General Semiconductor - Diodes Division