JANS2N3507A
Microchip Technology
Microchip Technology
POWER BJT
$72.45
Available to order
Reference Price (USD)
1+
$72.45000
500+
$71.7255
1000+
$71.001
1500+
$70.2765
2000+
$69.552
2500+
$68.8275
Exquisite packaging
Discount
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Upgrade your electronic designs with the JANS2N3507A Bipolar Junction Transistor (BJT) by Microchip Technology. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the JANS2N3507A is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Microchip Technology for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 500mA, 1V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
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