JANSF2N7373
Microchip Technology
Microchip Technology
RH POWER BJT
$1,920.00
Available to order
Reference Price (USD)
1+
$1920.00000
500+
$1900.8
1000+
$1881.6
1500+
$1862.4
2000+
$1843.2
2500+
$1824
Exquisite packaging
Discount
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Enhance your circuit designs with the JANSF2N7373 Bipolar Junction Transistor (BJT) from Microchip Technology. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The JANSF2N7373 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Microchip Technology to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
- Power - Max: 4 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: -
- Supplier Device Package: TO-254AA
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