KSB1151YSTU
onsemi
onsemi
TRANS PNP 60V 5A TO126-3
$0.99
Available to order
Reference Price (USD)
1+
$0.85000
10+
$0.75000
100+
$0.57930
500+
$0.46188
1,000+
$0.37329
Exquisite packaging
Discount
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Enhance your circuit designs with the KSB1151YSTU Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The KSB1151YSTU is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust onsemi to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V
- Power - Max: 1.3 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126-3
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