KSB1366GTU
onsemi
onsemi
TRANS PNP 60V 3A TO220F-3
$1.26
Available to order
Reference Price (USD)
1+
$0.87000
10+
$0.78000
100+
$0.60790
500+
$0.50214
1,000+
$0.39643
Exquisite packaging
Discount
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The KSB1366GTU Bipolar Junction Transistor (BJT) by onsemi is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the KSB1366GTU provides consistent performance in demanding applications. Choose onsemi for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
- Power - Max: 2 W
- Frequency - Transition: 9MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F-3
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