KSC5026MOS
onsemi
onsemi
TRANS NPN 800V 1.5A TO126-3
$0.93
Available to order
Reference Price (USD)
1+
$0.76000
10+
$0.66800
100+
$0.51190
500+
$0.40468
1,000+
$0.32374
Exquisite packaging
Discount
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Experience unmatched performance with the KSC5026MOS Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the KSC5026MOS delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose onsemi for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 800 V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 150mA, 750mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
- Power - Max: 20 W
- Frequency - Transition: 15MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126-3
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