KSD363YTU
onsemi
onsemi
TRANS NPN 120V 6A TO220-3
$1.61
Available to order
Reference Price (USD)
1,000+
$0.43390
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the KSD363YTU Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the KSD363YTU delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose onsemi for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 6 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
- Current - Collector Cutoff (Max): 1mA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V
- Power - Max: 40 W
- Frequency - Transition: 10MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
Related Products
NTE Electronics, Inc
2N5550
NXP USA Inc.
BC846BW/DG/B2115
Nexperia USA Inc.
BC856BMYL
Toshiba Semiconductor and Storage
2SC3325-O(TE85L,F)
Microchip Technology
JANTX2N6274
Nexperia USA Inc.
PMBS3906,215
onsemi
MJD32T4
onsemi
NSS12100XV6T1G
Renesas Electronics America Inc
2SA1052MCTR-E
Diodes Incorporated