L6494LDTR
STMicroelectronics
STMicroelectronics
IC GATE DRVR HALF-BRIDGE 14SO
$2.78
Available to order
Reference Price (USD)
1+
$2.78000
500+
$2.7522
1000+
$2.7244
1500+
$2.6966
2000+
$2.6688
2500+
$2.641
Exquisite packaging
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STMicroelectronics presents the L6494LDTR as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 1.45V, 2V
- Current - Peak Output (Source, Sink): 2A, 2.5A
- Input Type: CMOS/TTL
- High Side Voltage - Max (Bootstrap): 500 V
- Rise / Fall Time (Typ): 25ns, 25ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SO
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