LM25101BMAX/NOPB
Texas Instruments
Texas Instruments
IC GATE DRVR HALF-BRIDGE 8SOIC
$2.11
Available to order
Reference Price (USD)
2,500+
$1.46300
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Texas Instruments presents the LM25101BMAX/NOPB as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 9V ~ 14V
- Logic Voltage - VIL, VIH: 2.3V, -
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 100 V
- Rise / Fall Time (Typ): 570ns, 430ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
Related Products
Microchip Technology
MIC4468YWM-TR
Infineon Technologies
2ED21094S06JXUMA1
Microchip Technology
MD1811K6-G
Intersil
ISL6605CRZA
Renesas Electronics America Inc
ISL6622IRZ
Infineon Technologies
IR2108PBF
onsemi
NCP4420DR2
Infineon Technologies
IRS2817DSTRPBF
Renesas Electronics America Inc
ISL6208IRZ-T
Microchip Technology