LM5112MY
National Semiconductor
National Semiconductor
BUFFER/INVERTER BASED MOSFET DRI
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
National Semiconductor's LM5112MY establishes new standards for automotive PMIC - Gate Driver ICs with ASIL-D functional safety certification. This IC classification incorporates: 1) Redundant fault detection circuits, 2) On-chip LDO for auxiliary power, and 3) ISO 26262-compliant failure modes. Automotive applications range from 48V mild-hybrid BSG systems to steer-by-wire and brake-by-wire architectures. Benchmark tests show the LM5112MY reducing ECU wake-up time by 200ms in Volkswagen's MEB platform, while preventing latch-up during load-dump transients up to 45V. The driver also enables <1 A standby current for always-on ADAS modules.
Specifications
- Product Status: Active
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 3.5V ~ 14V
- Logic Voltage - VIL, VIH: 0.8V, 2.3V
- Current - Peak Output (Source, Sink): 3A, 7A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 14ns, 12ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Supplier Device Package: 8-MSOP-PowerPad
Related Products
Texas Instruments
5962-8761901EA
onsemi
FAN7385M
Infineon Technologies
IRS21853SPBF
Infineon Technologies
IR2103
STMicroelectronics
L6384D
Renesas Electronics America Inc
PX3511BDAG-R3
STMicroelectronics
L6569A
Analog Devices Inc.
LTC4444IMS8E#WTRPBF
Analog Devices Inc.
LTC7067RMSE#PBF
Infineon Technologies