LM5112Q1SD/NOPB
Texas Instruments
Texas Instruments
IC GATE DRVR LOW-SIDE 6WSON
$1.85
Available to order
Reference Price (USD)
1,000+
$0.66000
2,000+
$0.61600
5,000+
$0.58520
Exquisite packaging
Discount
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The LM5112Q1SD/NOPB from Texas Instruments redefines compact power management as a space-optimized PMIC - Gate Driver IC. Measuring just 3x3mm QFN, this classification achieves 5kV reinforced isolation through innovative transformer coupling technology. Signature features are: 1) 50% lower quiescent current than industry average, 2) 3.3V/5V logic level translation, and 3) Lead-free/RoHS 3.0 compliance. Consumer electronics particularly benefit in wireless charging pads (Qi 1.3 standard), drone ESC modules, and VR headset power circuits. Real-world testing demonstrates the LM5112Q1SD/NOPB enabling 95W USB-PD adapters at 30W/in power density - a key enabler for Apple's MagSafe ecosystem.
Specifications
- Product Status: Active
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 3.5V ~ 14V
- Logic Voltage - VIL, VIH: 0.8V, 2.3V
- Current - Peak Output (Source, Sink): 3A, 7A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 14ns, 12ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-WSON (3x3)
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