LS5912 SOIC 8L-A
Linear Integrated Systems, Inc.
Linear Integrated Systems, Inc.
WIDEBAND, HIGH GAIN, MONOLITHIC
$8.88
Available to order
Reference Price (USD)
1+
$8.88000
500+
$8.7912
1000+
$8.7024
1500+
$8.6136
2000+
$8.5248
2500+
$8.436
Exquisite packaging
Discount
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The LS5912 SOIC 8L-A from Linear Integrated Systems, Inc. represents the pinnacle of JFET technology in Discrete Semiconductor Products. This high-temperature variant operates flawlessly up to 200 C while maintaining stable parameters. The proprietary diffusion process ensures minimal parameter drift over time and temperature cycles. Oil exploration tools, geothermal monitoring systems, and aircraft engine sensors extensively use this JFET. Its unique capabilities shine in downhole electronics, combustion analysis equipment, and spacecraft thermal management systems. With its ceramic packaging and high-reliability construction, the LS5912 SOIC 8L-A continues to set industry benchmarks for JFET performance in extreme environment applications.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel
- Voltage - Breakdown (V(BR)GSS): 25 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 500 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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