LSK170B SOT-23 3L
Linear Integrated Systems, Inc.
Linear Integrated Systems, Inc.
LOW NOISE & CAPACITANCE, HIGH IN
$6.31
Available to order
Reference Price (USD)
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$6.31000
500+
$6.2469
1000+
$6.1838
1500+
$6.1207
2000+
$6.0576
2500+
$5.9945
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Introducing the LSK170B SOT-23 3L from Linear Integrated Systems, Inc.'s premium Discrete Semiconductor Products - a JFET engineered for high-frequency applications. This RF-optimized transistor offers outstanding gain-bandwidth product and minimal feedback capacitance. The advanced epitaxial process ensures tight parameter distribution and excellent yield. Wireless infrastructure equipment manufacturers utilize the LSK170B SOT-23 3L in base station receivers, software-defined radios, and radar systems. Its low intermodulation distortion makes it perfect for multi-carrier cellular systems and satellite transponders. The device also finds use in specialized applications like quantum computing interfaces and terahertz wave detectors, demonstrating its exceptional high-frequency capabilities.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): 40 V
- Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 200 mV @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 400 mW
- Operating Temperature: -55°C ~ 135°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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