MAQ4123YME-TRVAO
Microchip Technology
Microchip Technology
IC MOSFET DVR 3A L-SIDE 8SOIC
$2.88
Available to order
Reference Price (USD)
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$1.44000
10+
$1.29000
25+
$1.16000
100+
$1.05500
250+
$0.95500
500+
$0.85500
Exquisite packaging
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Optimize your power systems with Microchip Technology's MAQ4123YME-TRVAO, a flagship PMIC - Gate Driver IC featuring dual-channel output with independent control. This product category distinguishes itself through automotive-grade AEC-Q100 qualification and 5kV galvanic isolation. The MAQ4123YME-TRVAO demonstrates superior performance in: 1) reducing shoot-through current by 60% compared to conventional drivers, 2) supporting 2MHz switching frequency, and 3) offering DESAT protection for short-circuit prevention. Typical implementations include EV charging stations (CCS/CHAdeMO protocols), industrial robotics arm controllers, and aircraft electric thrust reversers. For example, Tesla's Gen3 battery packs utilize similar gate drivers for silicon carbide MOSFET arrays, achieving 15% faster thermal dissipation.
Specifications
- Product Status: Active
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5V ~ 20V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 3A, 3A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 11ns, 11ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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