MBR30H150CT_T0_00001
Panjit International Inc.
Panjit International Inc.
ULTRA LOW IR SCHOTTKY BARRIER RE
$1.31
Available to order
Reference Price (USD)
1+
$1.31000
500+
$1.2969
1000+
$1.2838
1500+
$1.2707
2000+
$1.2576
2500+
$1.2445
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MBR30H150CT_T0_00001 rectifier array from Panjit International Inc. redefines efficiency in the Diodes - Rectifiers - Arrays classification. Its optimized chip geometry enables higher surge withstand capability, critical for automotive alternators and arc suppression circuits. This product shines in three-phase rectification and snubber networks, offering aerospace-grade reliability. Panjit International Inc.'s precision manufacturing ensures each MBR30H150CT_T0_00001 meets stringent quality standards for mission-critical applications.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io) (per Diode): 15A
- Voltage - Forward (Vf) (Max) @ If: 850 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 800 nA @ 150 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
Related Products
Vishay General Semiconductor - Diodes Division
VBT2060G-E3/4W
NXP USA Inc.
NUR460P/L02112
Vishay General Semiconductor - Diodes Division
BYV32-150-E3/45
Diodes Incorporated
SBR20A200CTFP
Vishay General Semiconductor - Diodes Division
VBT1060C-E3/4W
Central Semiconductor Corp
CMPD2836E TR PBFREE
Vishay General Semiconductor - Diodes Division
SS6P4CHM3_A/H
GeneSiC Semiconductor
MSRTA400140A
Infineon Technologies
DD89N18KHPSA1
Vishay General Semiconductor - Diodes Division