MC1413BDR2G
onsemi
onsemi
TRANS 7NPN DARL 50V 0.5A 16SOIC
$0.66
Available to order
Reference Price (USD)
1+
$0.66000
500+
$0.6534
1000+
$0.6468
1500+
$0.6402
2000+
$0.6336
2500+
$0.627
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for reliability, the MC1413BDR2G BJT Array from onsemi delivers unmatched performance in Discrete Semiconductor Products. Its optimized gain bandwidth and low saturation voltage cater to demanding applications like sensor interfaces, relay drivers, and H-bridge circuits. The MC1413BDR2G shines in medical equipment and aerospace systems where precision is critical. This product s hermetically sealed packaging ensures longevity even in harsh environments, making it a trusted component for mission-critical designs.
Specifications
- Product Status: Active
- Transistor Type: 7 NPN Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
Related Products
Toshiba Semiconductor and Storage
HN1B04FE-Y,LF
Rohm Semiconductor
EMX18T2R
Microchip Technology
JANTX2N5794A
Infineon Technologies
BC857SH6433XTMA1
Nexperia USA Inc.
PBSS4260PAN,115
Nexperia USA Inc.
PEMT1,315
Diodes Incorporated
BC857BV-7
Diodes Incorporated
ZXTD09N50DE6TA
Central Semiconductor Corp
CMKT2907AG TR PBFREE
Panjit International Inc.