MIEB101H1200EH
IXYS
IXYS
IGBT MODULE 1200V 183A 630W E3
$135.60
Available to order
Reference Price (USD)
5+
$104.86400
Exquisite packaging
Discount
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IXYS's MIEB101H1200EH stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the MIEB101H1200EH enables higher power density in MRI gradient amplifiers. Choose IXYS for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 183 A
- Power - Max: 630 W
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
- Current - Collector Cutoff (Max): 300 µA
- Input Capacitance (Cies) @ Vce: 7.43 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E3
- Supplier Device Package: E3
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