MII200-12A4
IXYS
IXYS
IGBT MOD 1200V 270A 1130W Y3DCB
$164.00
Available to order
Reference Price (USD)
2+
$129.04000
Exquisite packaging
Discount
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Engineered for excellence, the MII200-12A4 IGBT module by IXYS sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The MII200-12A4 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. IXYS continues to lead the IGBT module revolution with innovations like the MII200-12A4.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 270 A
- Power - Max: 1130 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 150A
- Current - Collector Cutoff (Max): 10 mA
- Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y3-DCB
- Supplier Device Package: Y3-DCB
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