MIXA225PF1200TSF
IXYS
IXYS
IGBT MOD 1200V 360A 1100W
$123.34
Available to order
Reference Price (USD)
3+
$106.30333
Exquisite packaging
Discount
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IXYS's MIXA225PF1200TSF stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the MIXA225PF1200TSF enables higher power density in MRI gradient amplifiers. Choose IXYS for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: PT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 360 A
- Power - Max: 1100 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 225A
- Current - Collector Cutoff (Max): 300 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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