MIXA60HU1200VA
IXYS
IXYS
IGBT MOD 1200V 85A 290W V1A-PAK
$29.40
Available to order
Reference Price (USD)
24+
$39.66875
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with IXYS's MIXA60HU1200VA IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The MIXA60HU1200VA offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the MIXA60HU1200VA in your next-generation HVDC systems or particle accelerator power supplies. IXYS delivers reliability where it matters most with the MIXA60HU1200VA IGBT module.
Specifications
- Product Status: Active
- IGBT Type: PT
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 85 A
- Power - Max: 290 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: V1A-PAK
- Supplier Device Package: V1A-PAK
Related Products
Infineon Technologies
FS100R12N2T7B15BPSA1
Microchip Technology
APTGT400A120D3G
Infineon Technologies
FF150R12KE3B8BPSA1
Infineon Technologies
FP50R12N2T7BPSA2
IXYS
MIXG70W1200TED
Infineon Technologies
FS50R17KE3B17BPSA1
Microchip Technology
APTGT75H120TG
Infineon Technologies
FF225R12ME4B11BPSA2
Microchip Technology
APTGT50DA120TG
Infineon Technologies