MJ10001
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN DARL 400V 20A TO3
$5.72
Available to order
Reference Price (USD)
1+
$5.72000
500+
$5.6628
1000+
$5.6056
1500+
$5.5484
2000+
$5.4912
2500+
$5.434
Exquisite packaging
Discount
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Enhance your circuit designs with the MJ10001 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The MJ10001 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NTE Electronics, Inc to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 20 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 20A
- Current - Collector Cutoff (Max): 250µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 5V
- Power - Max: 175 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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