MJ10016
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN DARL 500V 50A TO3
$12.00
Available to order
Reference Price (USD)
1+
$12.00000
500+
$11.88
1000+
$11.76
1500+
$11.64
2000+
$11.52
2500+
$11.4
Exquisite packaging
Discount
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Experience unmatched performance with the MJ10016 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the MJ10016 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose NTE Electronics, Inc for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 50 A
- Voltage - Collector Emitter Breakdown (Max): 500 V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A
- Current - Collector Cutoff (Max): 250µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 20A, 5V
- Power - Max: 250 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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