MJ11012G
onsemi
onsemi
TRANS NPN DARL 60V 30A TO204
$7.35
Available to order
Reference Price (USD)
1+
$7.28000
10+
$6.57400
100+
$5.44230
500+
$4.73912
1,000+
$4.12762
Exquisite packaging
Discount
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Experience unmatched performance with the MJ11012G Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the MJ11012G delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose onsemi for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 30 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
- Power - Max: 200 W
- Frequency - Transition: 4MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204 (TO-3)
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