MJ11032
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN DARL 120V 50A TO204
$13.00
Available to order
Reference Price (USD)
1+
$13.00000
500+
$12.87
1000+
$12.74
1500+
$12.61
2000+
$12.48
2500+
$12.35
Exquisite packaging
Discount
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The MJ11032 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the MJ11032 provides consistent performance in demanding applications. Choose NTE Electronics, Inc for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 50 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 3.5V @ 500mA, 50A
- Current - Collector Cutoff (Max): 2mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 25A, 5V
- Power - Max: 300 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AE
- Supplier Device Package: TO-204 (TO-3)
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