MJ11033
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP DARL 120V 50A TO204
$13.00
Available to order
Reference Price (USD)
1+
$13.00000
500+
$12.87
1000+
$12.74
1500+
$12.61
2000+
$12.48
2500+
$12.35
Exquisite packaging
Discount
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Enhance your circuit designs with the MJ11033 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The MJ11033 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NTE Electronics, Inc to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 50 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 250mA, 25A
- Current - Collector Cutoff (Max): 2mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 25A, 5V
- Power - Max: 300 W
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-204AE
- Supplier Device Package: TO-204 (TO-3)
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