MJ13335
Solid State Inc.
Solid State Inc.
TRANS NPN 500V 20A TO3
$5.00
Available to order
Reference Price (USD)
1+
$5.00000
500+
$4.95
1000+
$4.9
1500+
$4.85
2000+
$4.8
2500+
$4.75
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the MJ13335 Bipolar Junction Transistor (BJT) from Solid State Inc.. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The MJ13335 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Solid State Inc. to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 20 A
- Voltage - Collector Emitter Breakdown (Max): 500 V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 6.7A, 20A
- Current - Collector Cutoff (Max): 5mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
- Power - Max: 275 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
Related Products
Rohm Semiconductor
2SAR522EBTL
Central Semiconductor Corp
CZT955 TR PBFREE
Nexperia USA Inc.
BF550,235
Microchip Technology
JANTX2N3636
Fairchild Semiconductor
2N6518TA
onsemi
2N5302G
Infineon Technologies
BC818K16WH6327XTSA1
onsemi
MMBT2484LT3G
Central Semiconductor Corp
MJE13005 PBFREE
Microchip Technology