MJD117T4
STMicroelectronics
STMicroelectronics
TRANS PNP DARL 100V 2A DPAK
$0.74
Available to order
Reference Price (USD)
2,500+
$0.26590
5,000+
$0.25054
12,500+
$0.23518
25,000+
$0.23262
Exquisite packaging
Discount
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Enhance your circuit designs with the MJD117T4 Bipolar Junction Transistor (BJT) from STMicroelectronics. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The MJD117T4 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust STMicroelectronics to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
- Current - Collector Cutoff (Max): 20µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
- Power - Max: 20 W
- Frequency - Transition: 25MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
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